30F124

50 EGP
Applications : Plasma display panels IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage

30j127

25 EGP
30j127 Description This is 600V, 200A, IGBT. The IGBT is insulated-gate bipolar transistor. PDP sustain, energy recovery and separation circuits

5N60C

25 EGP
5N60C art number : 5N60C, FQP5N60C, FQPF5N60C Functions : 600V, 4.5A, N-Channel MOSFET Package information : TO-220, TO-220F Type Manufacturer : Fairchild

2N3055

25 EGP
Transistor: NPN; bipolar; 60V; 15A; 115W; TO3 Manufacturer part number:2N3055 SPECIFICATION Type of transistor NPN Polarisation bipolar Collector-emitter voltage 60V